PSpice Circuit Modeling And Application Of Wide Bandgap Semiconductor Devices

In order to meet the demands of high frequency,high efficiency and high power density of power electronics equipments,wide bandgap semiconductor devices are increasingly used in power electronics systems.In order to better study the electrical characteristics of wide bandgap semiconductor devices,better exert their performance advantages in applications,and provide simulation analysis methods for analysis and design of power electronics systems,it is urgent to establish corresponding simulation models for wide bandgap semiconductor devices,especially for Gallium Nitride High Electron Mobility Transistor(GaN HEMT)and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor(SiC MOSFET),which are widely used in power electronics systems.In view of the problem that the existing GaN HEMT and SiC MOSFET models are prone to non-convergence in complex circuits simulation,the PSpice circuit modeling of GaN HEMT and SiC MOSFET are studied in detail in this thesis.Firstly,GaN HEMT is modeled in PSpice.Taken a GaN HEMT(EPC2010)from EPC as an example,the non-segmented model of GaN HEMT is established using non-segmented and continuously differentiable equations.The static characteristics of the proposed non-segmented GaN HEMT model are verified by the comparison results between PSpice simulation curves and characteristic curves provided in datasheet.The dynamic characteristics of the proposed non-segmented GaN HEMT model are verified by the comparison results between simulation and experiment of double pulse test circuit.In addition,the proposed non-segmented model and conventional segmented model are put into the same full-bridge inverter circuit for simulation,and simulation results show that the non-segmented model has better simulation convergence than the conventional segmented model.Then,SiC MOSFET is modeled in PSpice.Taken a SiC MOSFET(C2M0045170D)from Cree as an example,the model is defined using non-segmented and continuously differentiable equations,and the influence of ambient temperature on the model is considered.The non-segmented model of SiC MOSFET for different ambient temperatures is established.The static characteristics of the proposed non-segmented SiC MOSFET model are verified based on PSpice simulation and datasheet characteristic curves.The dynamic characteristics of the proposed non-segmented SiC MOSFET model at different ambient temperatures are verified by the comparison results between simulation and experiment of double pulse test circuit at 25?,75?and 125?.In addition,the proposed non-segmented model,conventional segmented model and the model provided by the manufacturer's official website are put into the same full-bridge inverter circuit for simulation,and simulation results further verify the non-segmented model established by using non-segmented and continuously differentiable equations can effectively improve the simulation convergence.Finally,in order to study the short-circuit characteristic of SiC MOSFET,a short-circuit model of SiC MOSFET is established based on the non-segmented model.The junction temperature curve of SiC MOSFET is obtained by the thermal network model,and the short-circuit current is fitted based on the junction temperature.The correctness of the short-circuit model is verified based on the simulation and experimental results provided in the literature,which makes it possible that studying and analyzing the SiC MOSFET short-circuit characteristics in simulation.