Research On Electro-Static Discharge Protection Design Of Dual Interface Card Chip

With the development of semiconductor technology,the performance of integrated circuit products is getting better and better,the computing speed is getting faster and faster,and the cost is also decreasing gradually.Under the advanced semiconductor technology,the protection ability of integrated circuit to electrostatic discharge will be reduced a lot,and it is more likely to be damaged by electrostatic discharge.This will greatly reduce the yield and reliability of the product.Therefore,it is of great significance to design a reasonable electrostatic discharge protection scheme for IC products.In this thesis,the electrostatic discharge protection design of the double-interface card chip is carried out,which effectively solves the problem of electrostatic discharge failure of the chip.The definition of three discharge models and the testing methods of different discharge models are researched in this thesis.The typical protective devices and structures in electrostatic discharge protection are discussed.The basic architecture of the dual interface card chip is analyzed,and the power supply structure and layout design are carried out.The design of electrostatic discharge protection network for dual interface card chip is introduced.The mannequin and component charging model of the chip were tested and the failure mechanism was analyzed.Combined with the determined failure point,the full-chip electrostatic discharge protection structure of the double-interface card chip is analyzed and the design optimization scheme is proposed:1.Optimized the power supply structure of the double-interface card chip,separated the ground wire of the high-voltage device connected to the antenna in the RADIO frequency circuit from the internal ground wire,and directly connected the ground wire of the high-voltage device to the electrostatic discharge current bus;2.Improved the structure of the all-chip electrostatic discharge protection network,and added the access point between the ground wire inside the chip and the electrostatic discharge bus;3.Optimize the electrostatic discharge protection structure of the RF circuit module and input and output unit,and add an electrostatic discharge protection device to the input control signal port of the module unit;4.In the digital logic section,electrostatic discharge protection devices are added for the input signal ports from input and output units and RF module signals.After the metal layer is modified,the chip has tapeout,packaged and tested with electrostatic discharge,and the electrostatic discharge test results of the modified chip are counted.The design method of electrostatic discharge for dual interface card chip is summarized.Finally,the failure threshold of the dual-interface card chip under the human body model exceeds 7000V,and the failure threshold of the component charging model exceeds 1750V.To sum up,this paper designs and optimizes the power supply structure of the dual interface card chip and the whole chip electrostatic discharge protection network.Through a series of electrostatic discharge tests and failure mechanism analysis,the most vulnerable position of the chip is found out,and the optimization scheme of the chip power supply structure and the whole chip electrostatic discharge protection network are proposed.It is applied to double interface card chip and stream chip.The final electrostatic discharge test results of the chip meet the market demand and improve the product yield and reliability of the dual-interface card chip.