Research On High Power IGBT Gate Modulation Drive And Fault Protection

Insulated gate bipolar transistor(IGBT)is widely used in the industrial production field because of its excellent performance.Improving the reliability of IGBT module is the most valuable research topic in the development of IGBT technology.Under this background,this paper analyzes the difference between gate charge of IGBT under various fault behaviors and normal switching conditions,and proposes a fault diagnosis method of IGBT with gate charge as the characteristic parameter.By simulating all kinds of faults,the change curve of gate charge is obtained.The results show that in the event of different types of faults,the gate charge can distinguish the above faults obviously,so as to find out the fault reason more accurately.(1)This paper summarizes the main failure mechanism of IGBT modules,especially the IGBT devices in high-power applications.This paper describes the main failure modes and the physical or chemical processes that lead to the failure,providing theoretical support for designers to study the long-term reliability of IGBT modules.This paper analyzes the driving method of IGBT module gate detection and protection,and introduces and discusses the current detection and protection technology.(2)In this paper,a gate voltage modulation method is proposed,which uses PCB Rogowski coil for d I_c/dt feedback.In the transient current change phase of IGBT switch,the switch signal is switched,and the gate voltage is adjusted,so as to minimize the excessive current spike when IGBT is opened,the voltage spike of the freewheeling diode and the excessive voltage spike when IGBT is closed.(3)In this paper,a practical detection circuit for IGBT module fault is proposed,which includes class one short circuit,class two short circuit,class one open circuit and class two open circuit.This new method is based on the gate charge as the eigenvalue,through its change to detect the IGBT module.In addition,the test platform will be built to review the proposed detection cycle.The results show that the proposed fault detection of the IGBT module is effective on the basis of the torque charge.There are 38 figures,4 tables and 93 references in this paper.