Design Of 600V High Voltage Gate IGBT Half Bridge Drive

As a new type of power device,IGBT has become the first choice of high-voltage integrated circuits with its good switching characteristics and lower power consumption.The application fields of IGBTs are more and more extensive.In order to ensure the safe,reliable and efficient operation of the IGBT in the circuit,the research of the drive circuit is particularly important.Designing an excellent IGBT drive circuit also has a good development prospect.the IGBT drive circuit designed in this paper is based on 1?m 600V BCD process platform,the main work of this paper includes the following points:1.Completed the design of interface circuit,level shift circuit,drive circuit and ESD power clamp circuit;2.The sub-module circuit of the design is simulated to verify the correctness of its function;3.Completed the design of the driver circuit layout.The performance parameters and indicators are as follows:The half-bridge drive mode is adopted to realize the conversion of the dual-channel drive signal.The high-side path achieves 615V output,the low-side path is 15V output,the drive current is±2A,and the maximum operating frequency is 500KHz.Through the analysis of the simulation results,the designed sub-module circuit can achieve its function well,and the performance parameters also reach the original design index.The drive circuit designed in this paper has the following characteristics:1.The level shift circuit is the core of the whole drive circuit.A complementary symmetrical structure is adopted,which can realize the conversion of high-voltage power supply potential and high-voltage ground potential at the same time.High and low potential electrical Isolation is effectively realized to reduce the influence of parasitic effects on the circuit and improve the reliability of the circuit.2.The integrated ESD power clamp circuit in the driver circuit can effectively prevent ESD damage to the chip.The feedback structure is introduced to enhance the stability of the clamp circuit and reduce the possibility of false opening of the clamp circuit under the influence of interference factors.3.In the layout design of the circuit,a high-voltage isolation island is applied to isolate the low-voltage circuit from the high-voltage circuit,and avoid crosstalk between different potentials.Finally,the sub-module circuit of the design is integrated to complete the design of the overall circuit.The simulation software is used to perform pre-simulation and post-simulation on the performance of the whole circuit,and the difference of the simulation results is compared.The simulation results show that the designed sub-module circuit and the complete chip can meet the original design requirements.The verification of the design theory is realized.