The Packaging Technology Research Of Silicon-based GaN Power Device

Nowadays,with the rapid development of the electronics industry,it is becoming increasingly important to provide efficient energy control solutions for a wide range of electronic products,while also driving power devices toward greater power,especially for highpower devices.It is moving toward high voltage,high current,high frequency,high integration and intelligence.GaN power devices are emerging in the field due to their large band gap and high saturation electron mobility.However,GaN power devices are generally normally-on devices that require a negative voltage shutdown,so there is a potential for short-circuit through.Therefore,normally closed cascaded GaN power devices have emerged.As a high-power device,the cascode type GaN power device generates a large amount of heat,and if it is accumulated in the device package for a long period of time,the junction temperature of the device rises and the Schottky junction deteriorates.Therefore,how to effectively dissipate heat has become a prominent problem.In the finished product,the heat dissipation of the package is a necessary heat dissipation path,and the effect of heat dissipation is greatly different due to the difference in packaging materials.In this paper,a practical cascading GaN power device packaging scheme is designed.The feasibility of the scheme is demonstrated by ANSYS software simulation and the sample is made.The heat dissipation function of the sample is optimized and the infrared thermal imager is used for test and analysis.Its main contents are as follows:1)The cascading GaN power device was modeled by ANSYS finite element simulation software,and the heat source distribution of the device was simulated.Based on this model,different adhesive sheet materials and different types of molding materials were used to dissipate heat Impact.Simulations show that the temperature of the device is within the normal tolerance of the TO-220 FL,and simulates the operating temperature of the different package materials.2)Analyzed the contradiction between the traditional process and the experimental circuit of the cascaded GaN power device,and proposed a feasible solution to produce the finished GaN power device in the form of TO-220 FL package,and explored the effect of the material on the heat dissipation effect,through the infrared camera test,DC test and pulse current test shows that the performance of the device with better heat dissipation performance is significantly improved.And the experimental results and the simulation data have a high degree of agreement,which has practical guiding significance.