Design And Packaging Of Power UV-LED

Ultraviolet Light-Emitting Diode(UV-LED),compared with the traditional UV light source,has the characteristics of the high luminous efficiency,single spectrum,long life,energy saving and environmental protection,fast response speed,small size,etc.In recent years,with the rapid development of UV-LED chip level and packaging technology,UV-LED has a huge market prospect in ink curing and other sectors.At present,the chip technology of UV-LED is not as mature as blue and red LED.In addition to the need to improve the chip level,packaging technology also has the important impact on the performance of UV-LED.This paper mainly focuses on the research on the packaging technology of power UV-LED,which combines with the LED thermal simulation design,and proposes the packaging structure design for the single-chip UV-LED,multi-chip integrated UV-LED and high-power UV-LED module,and finally fabricates the power UV-LED with excellent performance.The research results are as follows:1.The innovative introduction of high-resistance silicon wafer in the package of single-chip power UV-LED can not only improve the optical power of UV-LED,but also improve the reliability of UV-LED by increasing the anti-static ability of the chip and reducing the degradation of light output power in UV-LED.2.LED heat dissipation simulation design as the guide,we fabricate a vertical structure LED based on Si substrate with a large size of 3 mm×3 mm chip.The packaging LED can not only improve the current distribution so as to improve the luminous intensity,but also can reduce the thermal resistance and junction temperature to improve the reliability of LED device.The vertical GaN/Si LED has important applications in special high brightness fields.Although this study is aimed at the work of white LED,it has certain reference significance for the study of power UV-LED.3.In the research of power multi-chip integrated UV-LED,it is found that the optical power of UV-LED is approximately linear with the number of chips.The more the number of chips of UV-LED can achieve higher optical power density.However,the total thermal resistance of UV-LED does not show an approximately linear relationship with the number of chips.Through the research on thermal performance,we found that the total thermal resistance presents a different trend with the change of the number of chips under the condition of active heat dissipation and passive heat dissipation.Under the different working modes of the same packaging platform,the number of chips affects the total thermal resistance of UV-LED in different ways.According to the different conditions of the structure thermal resistance interaction can be explained,this work has an important guiding significance for the current industrial packaging technology route.4.In view of studying on high-power UV-LED module,this paper puts forward a kind of design idea of UV-LED module based on integrated support.The design realizes the integration packaging structure of the high-power UV-LED,and it not only can improve the density of light power and current load capacity of high-power UV-LED module,but effectively improve the reliability of the high-power UV-LED module from the aspects of heat dissipation,antistatic and total inorganic packaging.