| The continuous development of wireless communication technology sets higher requirements for multi-mode multi-band integrated circuits. The multi-mode multi-band RFIC design has become a hot spot. The Power Amplifier (PA) design has been a tough task when must meets the requirements of multi-mode protocol, covering high-speed data services, medium rate RFID and low rate voice services at the same time. The PA also must meets convergence of third-generation high-capacity, high spectral efficiency wireless communication technology integration, national non-contact ultra-high frequency radio frequency identification technology and wireless LAN Technology, supporting complex modulation.The thesis mainly focuses on multi-mode multi-band PA design. Firstly, methods of rising PA's efficiency and linearity under different protocols mode have been researched, then PA design based on SiGe BiCMOS process is discussed in detail, finally a research for PA's application in multi-mode multi-band transmitter is put forward.It should be noted that the main work in this thesis is based on a demostic 0.18μm SiGe BiCMOS process and author took part in all the works of passive/active device modeling, SiGe HBT powercell and PDK data improving and circuit design.The main work and contributions of this paper are as following:1. Based on a domestic 0.181μm SiGe BiCMOS process, high output power (>27dBm), high linearity powercells are designed and testd. Loadpull analysis of powercell gives power ability for multi-band PA design, and imporve the PDK data at the same time;2. Taking advantages of SiGe HEBT' high-power efficiency, good high frequency characteristics and high energy conversion, the multi-mode multi-band PA is designed to meet the requirements of 900MHz/1950MHz/2.4GHz band;3. Adaptive bias technology and a design method for outputmatching loss are introduced in 900MHz PA design, the PAE is arised for SiGe BiCMOS AB type PA. On wafer measurement results shows good PAE of 27.4% and the P1dB is higher than 24dBm. 4. Nolinearities in SiGe BiCMOS AB type PA at GHz is discussed in detail. Based on AM-PM/AM-AM analysis and a MOSVAR direct-feedback circuit, odd harmonics are suppressed and linearity is improved. On wafer measurements results shows P1dB≥24dBm, power added efficiency PAE@P1dB≥25.2%.The ACPR measured at 24dBm output is -37.04dBc, EVM rms is 2.11%;5. Power backoff technology is introduced for 2.4GHz wide band signal to improve linearity. A hysteresis comparator structure is used to broaden the channel bandwidth. Rational design of PA output matching network supresses harmonic distortion. Test results show that the P1dB is higher than 22dBm. The emission mask can also match 802.11b/g requirements;6. This thesis presents a direct-conversion multi-mode multi-band transmitter structure for data, identification and voice services. The main building blocks in the transmitter including frac-N frequency synthesizer, baseband and upmixer is designed, the preliminary test results confirms SiGe BiCMOS process's feasibility.The thesis is supported by National Key Project'Core Electronic Devices, High-end General chips and Basic Software', subtitle of'Embedded Multi-mode, multi-band Transceiver Key Hard IP Core'(No.2009ZX01034-002-002-001) and Shanghai International Cooperation Foundation, "SiGe BiCMOS RF Front-end Design of Key Integrated Circuits" (No.09700713800)...
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