2Kbits EFuse IP Design Based On 28nm Low Power Process

eFuse technology is one-time programmable memory technology.It uses electromigration and thermal fracture to store data.After programming,the information can be permanently stored.The eFuse memory circuit can store the key information in the chip,adjust the chip performance and be responsible for the function switching of the chip.It can also be used as a redundant circuit to improve the reliability of the chip.Due to its high reliability,eFuse memory is widely used in aviation,nuclear equipment,and mobile equipment to perform functions such as secure data storage,memory switching,and redundant replacement.This article uses Huali 28 nm low-power process to design an eFuse memory with high reliability and low power 2Kbits memory.In order to improve the reliability of the eFuse memory,the programming conditions of the eFuse fuse link were optimized by experimental tests in this design to improve the reliability of the write operation;the margin read and redundancy correction functions were added to the circuit to improve the read operation reliability.In order to reduce the power consumption of the eFuse memory,in this design,multiple working modes such as standby and hibernation are added to the eFuse memory,and the circuit of the sense amplifier is improved to further reduce the power consumption of the read operation.After the series of processes of tape-out and testing,the stability of the read-write function of the eFuse memory based on the design between-40 ° C and 110 ° C was verified.At the same time,the power consumption of standby mode reaches 2.7 μA and the sleep mode's power consumption reaches 116 n A.The results above show that the eFuse IP fulfills the predesigned functions and meets the expected targets.