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The Simulation Of Plasma Etching Based On Kinetic Monte Carlo Parallel Algorithm

Posted on:2021-03-11Degree:MasterType:Thesis
Country:ChinaCandidate:W LiuFull Text:PDF
GTID:2428330602995237Subject:Control Engineering
Abstract/Summary:PDF Full Text Request
Micro/Nano-Fabrication is widely used in many fields such as electronic materials,biomedicine,aerospace,and military,and it is one of the most important technologies to promote the development of new industries.According to Moore's Law,the feature size will become smaller and smaller,the processes of most micro/nano manufacturing need feedback control to get the higher accuracy.However,due to the lack of effective sensing methods for control,the research of most micro/nano manufacturing processes has not been developed for a long time.In order to solve this problem,a very typical micro/nano manufacturing process---plasma etching was studied.The main job is to build a model of plasma etching process based on the principle of mixed layer and Monte Carlo algorithm to get the relationship between control parameters and etching results during plasma etching process.It is mainly divided into the following points:1.Having the thin film growth process as the background,based on the KMC algorithm and OpenMP,the process is simulated with the parallel computing,and periodic boundary condition is included into the simulation domain.Comparing the result of parallel computing with that of serial,it is verified that the parallel computing does not influence the correctness of the results and the dynamics of the process.Then,the acceleration effect of the parallel computing is analyzed.2.Based on the principle of mixed layer and KMC algorithm,a 3D simulator of plasma etching was completed.In order to include the atomic composition information of etching materials and various etching reactions into the model,the 3D simulation domain is divided into small squares within composition information;meanwhile,the 3D simulation domain is fitted to a local polynomial surface in order to make the simulation result more actual.3.Having the SiO2 plasma etching process as the background,based on the 3D simulator,we get the surface micro-structure and profile roughness of the etched material under different control conditions such as different neutral to ion ratios and different ion energies.The relationship between simulation results and different control conditions are analyzed.The effects of ion angle distribution on the etching results are also discussed.The simulator will not only be helpful for including feedback control into the plasma etching process but also provide a reference for solving the real-time micro/nano sensing problem in other micro/nano manufacturing process research.
Keywords/Search Tags:plasma etching, mixing-layer, Kinetic Monte Carlo, parallel computing, thin film growth, OpenMP
PDF Full Text Request
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