The Simulation For Dynamics Of Ⅲ-V Material Epitaxy Growth And The Experiment Of Wafer Bonding

The research work of this thesis is carried out on the basis of the sub-project one "Theory on heterogeneous materials compatibility and Key Structure & Technology Innovations for Monolithic Integrated Optoelectronic Devices" (Project No.2003CB3149001) and the sub-project two "Innovation and Fundamental Research on Low-temperature Wafer Bonding and Quasi-monolithic Optoelectronics Integration Technologies" (Project No.2003CB3149002). They both belong to the major project "Basic Research on Integrated Optoelectronic Devices and Microstructure Optical Fibers with Structure and Technology Innovations for Future Advanced Optical Communications" , the State Key Development Program for Basic Research of China(Project No.2003CB314900),which professor Ren Xiaomin is responsible for as a chief scientist.LASER and detector can't improve without the development of the material of photoelectron. The development of photoelectron material makes it possible of the higher speed and larger capability of the optical transmission. The growth of the epitaxy of the material is the foundation of the whole facture of the LASER machinery. It has great influence on the optics and electrics performance of the machine. Without the high quality of the material system, it is impossible to get the high...