Research On Kinetic Growth Analysis And Electronic Structure Of Semiconductor Quantum Ring

With the rapid development of science and technology, the semiconductor devices have been updated quickly on the Processing speed, low power consumption and microminiaturization. Based on the excellent quantum effect, it has got great success on the application of instruments. Semiconductor quantum rings (QRs) have been a topic extensively studied in recent years owing to their unique applications in mesoscopic physics and fabrication of nano-devices. QR always shows the unique electronic and optical properties due to the particular topology. At the same time it offers a unique chance to study the unusual magnetic behavior of susceptibility and the Aharonov-Bohm effect. There are three parts of this paper:1. By using the droplet epitaxy technology, we study the theory of thermodynamics behavior and kinetic growth of quantum ring. At the beginning of the growth of quantum ring, the Ga atoms and As atoms will nucleate at the edge of the droplet due to the high surface energy. Finally, the diffusion of the Ga atom and the capture of the As atom decide the final shape.2. Through using the Kinetic Monte Carlo method to simulate the growth of QR, we have investigated the influence of growth parameters during the growth process. We study the shape and size of QR by varying the embedded inclusion dimensions and the separation distance between the two embedded inclusions.3. We have studied the electronic structure of QR by using the finite element method. Through the finite element method, we calculate the strain distribution of QR, and investigated the strain distribution and piezoelectric effect influence on the optical absorption coefficient.