Research On Film By PECVD Based On Silane Plasma

MEMS CAD plays an important role in MEMS micro-surface machining technology.The complex structure and layout of MEMS devices are studied by computer,and the design results are presented intuitively.MEMS microsurface fabrication processes include lithography,etching,low pressure chemical vapor deposition,physical vapor deposition,plasma assisted chemical vapor deposition,etc.In this paper,the computer aided software design of PECVD film deposition process is emphatically carried out,and the simulation research in the direction of capacitive plasma source film deposition is improved.In this paper,the simulation software of plasma chemical vapor deposition is studied,which can realize the analysis of standard layout files,set plasma simulation chamber parameters and PECVD deposition parameters according to the specific process,and reproduce the process of MEMS surface machining process.The graphical interface is written by C++Builder software,which is divided into plasma simulation and PECVD deposition simulation.In the plasma simulation,the parallel plate cavity of capacitive coupled plasma was studied based on particle grid Monte Carlo method(PIC/MCC),and the discharge model of silane and oxygen mixed plasma was established.The program main body can be divided into five modules: cavity initialization,electric field calculation,particle transport,collision simulation and boundary processing.In PECVD deposition simulation,the narrow band level set algorithm is used to simulate the surface evolution of thin films.The main body of PECVD deposition module can be divided into three parts: layout analysis module,surface evolution module and display module.In this paper,the key technology of the simulation of plasma simulation chamber is analyzed,and then the discharge reaction of silane and oxygen plasma is studied.Then,the technology of deposition of PECVD film is analyzed.Finally,the display module in the software interface is used to show the design of the software and the simulation results of each module.Compared with the mononuclear gas plasma process model,the capacitive plasma chamber simulation of various particle collision models was completed in this paper,and the simulation of PECVD deposition film was completed.The plasma simulation method,the discharge process of silane and oxygen and the PECVD deposition technology were introduced in detail.The simulation of silane particles in the capacitance-coupled plasma chamber and the deposition simulation of PECVD were completed.The influence of plate voltage was considered,and the differences between isotropy and anisotropy were compared.The correctness of the software is verified by comparing with the actual experimental results.