Monte Carlo Two-Dimensional Simulation Of Thin Films Growth

Thin film technologies are widely used in modern scientific and technological fields, and the study fruits of thin film science are increasingly translated into productivity. Thin film growth has been studied deeply and computer simulation is a useful method in the studies. In epitaxial growth, the particle aggrades into substrate with a average rate. Particle diffusion on the substrate also have random characteristic, so naturally particle deposition, adatom diffusion and adatom evaporation are described as statistical process. In fact, the Monte Carlo method is a statistical method. Therefore, the Monte Carlo method is naturally used to study the process.A systematic analyse of the kinetic and dynamic behavior of surface atoms during film growth is presented. The paper investigates the diffusion, attachment, and nucleation of the atoms on surface in submonolayer growth. At first, we study various theoretical methods, mainly including ab-initio calculations, molecular dynamics, kinetic Monte Carlo simulation, and rate equation theory. We mainly introduce the Monte Carlo method among them, including basic idea, characteristic and application etc. At last, we introduce the Matlab program code and simulation's result of some models' simulations which are DLA, Multicenter Growth and a whole model of two dimensions using Morse potential.DLA simulation gets a fractal island, and the average branch width of the island is about one atom. Multicenter Growth simulation get two results, fractal and conglobating growths, and meanwhile we get some parameters, such as island's number and island's average size. We detailedly introduce a whole Monte Carlo model of two dimensions. The effect of the interaction between particles is described using Morse potential. We consider particle deposition, adatom diffusion and adatom evaporation. The effects of the range of interparticle interaction a and the maximum steps that a particle is permitted to migrate on the thin film are investigated. The results show that under different a the films' growth all undergoes four stages: disperse, fractal, mixture of fractal and conglobating, and conglobating with the increase of particle's migration steps, and that under the same maximum steps the bigger the a the more easily the thin film tend to be in disperse growth.