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Theory Investigation On The Elastic Strain Field And Kinetic Monte Carlo Simulation Of Semiconductor Self-Organized Quantum Dots

Posted on:2007-04-27Degree:MasterType:Thesis
Country:ChinaCandidate:Q FengFull Text:PDF
GTID:2178360185968327Subject:Physical Electronics
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This work was supported by the National Basic Research Program of China "973" (No.2003CB314901), the National "863" High Technology Project of China (No. 2003AA311070) and the Open Project of the State Key Laboratory on Integrated Optoelectronics.Much of recent interest has focused on self-growth quantum dots as the hold potential for numerous technological applications.Firstly, we present an analytical method based on Green's Function for calculating strain filed in quantum dot structures of arbitrary shape. The method involves the evaluation of a surface integral over the boundary of the quantum dot. The strain distributions for some shapes as pyramid and cone are discussed .Compare to the element method, our method is more straightforward and faster to implement, and it is also particularly well suited as an input step in calculation of the electronic properties of quantum dots.Secondly, the Kinetic Monte Carlo simulations are applied on the study of film epitaxial growth on homogeneous and inhomogeneous heterogeneous surface. From the island morphologies figures and the islands sizes distribution statistic figures , we can see that the optimize growth condition are found to have strong dependence on these factors, such as decrease deposition flux F, increase lateral nearest neighbor atom term EN or increase temperature T. We can get islands located orderly in substrate when parameters...
Keywords/Search Tags:Self-organized quantum dot, Epitaxial growth, Strain field, Green method, Kinetic Monte Carlo
PDF Full Text Request
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