Research On The Application Of Resistive Random Access Memory Based On Standard CMOS Logic Process

In recent years,the market of non-volatile random access memory has expanded with the development of various smart electronics,the internet of things,and artificial intelligence.Flash memory based on charge storage has been a mainstay of the non-volatile random access memory market for more than two decades.However,the disadvantages of this memory are obvious,such as low programming speed(10?s),poor endurance(10~6 cycles),and high programming voltage(10v).Moreover,because the miniaturization will bring the parasitic effect that can not be ignored,the reliability of the memory will be greatly reduced.As the process node enters 1Xnm,flash memory will also reach the physical limit,and it is also difficult to meet the storage needs of new AI chips such as neural network computing and memory integration.Therefore,there is an urgent need to develop new non-volatile random access memory.The RRAM based on the concept of resistance change memory has the advantages of simple"sandwich"structure,high storage speed,large miniaturization potential,multi-value storage,good endurance and retention,and high compatibility with current conventional CMOS processes is considered the most promising next generation non-volatile random access memory.After in-depth research by researchers,RRAM has developed rapidly,gradually from the laboratory stage to industrialization,but also become a strong candidate for the next generation of non-volatile random access memory.The industrialization of resistive memory is also being promoted step by step.In this paper,based on 0.13?m and 40nm standard CMOS process,tantalum oxide and hafnium oxide are selected as the resistive material,and its application in embedded storage and storage is studied respectively.At present,the research based on SOI RRAM at home and abroad is still in the simulation stage,and the research on the anti irradiation application of SOI RRAM based embedded memory is very scarce,so we studied the reliability and anti irradiation characteristics of SOI RRAM device under 0.13?m process.The results show that the device has good retention and durability,and has excellent irradiation resistance.It provides an independent and controllable embedded storage solution for the development of high-level irradiation resistant chips.The basic electrical characteristics,multi-valued storage characteristics,linear modulation and other characteristics of synaptic devices in 40nm process,as well as the resistive state stability and read interference characteristics of 256k memory array are studied.It is proposed that the array can realize memory computing integration and can be used as the memory array of AI chip at first.