Resistance Memory The Rram The Reliability Research

With the growing popularity of portable electronic devices, people's requirement for high-density, high-speed, low-power and low-cost nonvolatile memory is also increasing. Currently, Flash is still the mainstream of nonvolatile memory technology, accounting for about 90% of the nonvolatile memory market share, but with the continuous scaling down of semiconductor technology node, Flash is experiencing more and more bottlenecks, such as the thickness of the floating gate can not be decreased infinitely. Moreover, high operating voltage and slow programming speed also limit the application of Flash. This has forced people to look for more superior next-generation nonvolatile memory, such as MRAM (Magneto-resistive RAM), FeRAM (Ferroelectric RAM), PCM (Phase Change Memory, also known as PRAM) and so on, but all of these memories have their own shortcomings.Metal oxide based RRAM (Resistive RAM) is considered as the most promising candidates for next-generation nonvolatile memory because of its simple structure, accurately controlled composition, logic process compatibility and so on. However, due to the R&D of RRAM is only at an initial stage, its electrical reliability issues and the testing system caused reliability problems have yet to be further expanded.This work systematically studies the electrical and testing reliability issues of CuxO based RRAM, and also analyzes the causes of these reliability issues and proposes the corresponding solutions. Firstly, this paper studies the electrical reliability issues of RRAM, especially the data retention capabilities, and also proposes a failure mechanism model. Then, this paper studies the reliability problems caused by the SET compliance current during the electrical testing, and observes the compliance current overshoot phenomenon for the first time by using the self-built compliance current capturing system. Finally, we summarize the conclusions for the full paper and make an outlook for the RRAM research.