| With the rapid development of mobile internet,data traffic is experiencing explosive growth,In this trend,the current mobile communication system in the low frequency band will be unable to meet the huge data needs of people.However,in the high frequency band,especially millimeter waves,they have a rich spectrum of resources and high-speed data service transmission capacity,and they can meet this need possibly.The power amplifier is a key module in a wireless transmitter,and also the largest power consumption module,so the performance of the power amplifier directly determines the performance of the transmitter,while in the high frequency range,parasitic parameters have a significant effect,linear power amplifiers are less efficient,and it has a high demand for the life and capacity of capacity.The class E power amplifier has the characteristics of high efficiency and simple structure,and can improve the efficiency of the entire transmitter,so the study of high frequency band class E power amplifier is very meaningful.The main work of this paper is as follows:Firstly,this paper investigates the relevant literature of power amplifiers,and introduces the latest research results of high frequency band class E power amplifier,then introduced the basic principle of class E power amplifier and the challenges in the high frequency band.Secondly,we design a 10 GHz class E power amplifier based on IBM 0.13?m SiGe process,which is the pre-verification work of Ka band class E power amplifier.According to the flexibility of Si Ge HBTs breakdown voltage,the output stage transistors use a series stack structure to increase the output power,the high-pass network of capacitors and resistors in parallel is employed to stabilize the circuit.And we completed the layout design and post layout simulation.The results show that the power amplifier is unconditionally stable,In the 9-11.4GHz frequency range,the input reflection coefficient is less than-10 d B,when the input power is 0d Bm,peak power add efficiency(PAE)is 47.44%,the output power is 21.1d Bm,saturate output power is 21.4 d Bm.Then,we tested the power amplifier,however,due to the lack of full consideration of the effects of the bonding wire inductor and the parasitic inductance of the layout,the power amplifier was unstable,and we did the verification work of a safe operation point voltage and so on.Thirdly,we design a 38 GHz class E power amplifier based on IBM 0.13?m Si Ge process.It is on the basis of the last design,and a millimeter wave class E power amplifier.After the verification of voltage safe operating point,it proved the feasibility of the stacked structure,so the output stage uses a stacked structure to increase the output power.We adapted harmonic trap network to stable circuit,and it can make the circuit stable and the attenuation of fundamental frequency signal is small.Due to the higher frequency band,we replaced the spiral inductor with a microstrip line,and did the electromagnetic simulation.Electromagnetic simulation of the power amplifier active area metal interconnection was carried out,and the optimal layout structure with less parasitic effect is obtained.And we completed the layout design and post layout simulation,the results show that the power amplifier is unconditionally stable,In the 33.4-42.6GHz frequency range,the input reflection coefficient is less than-10 d B,when the input power is 8d Bm,peak power add efficiency(PAE)is 29.3%,the output power is 21.56 d Bm,saturate output power is 22.1 d Bm.Then,the power amplifier was tested,and the test results show that the simulation and test have good consistency. |
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