| In the past 10 years, people have already achieved their dreams to communicate everywhere with the development of the wireless communication technique. Accordingly, the demand of high performance and large capacity is getting bigger. With this trend, Radio Frequency and communication circuit is becoming the focus of the world. As the key block of the wireless communication transmitter in RF, it is very useful in improving the output power and efficiency, lowering the loss of the supply, lowering the size and the weight, lengthening the time of communication. Class E power amplifier which is suitable to amplify envelop signal is very important in modern communication system.We explained the theory and the design approach of the power amplifier in whole thesis, and finished the design of the class E power amplifier working in RF.First, After the briefly introduction of the parameters in power amplifier, this thesis gives analysis of the operation principles for each type, and compares the linear PA and nonlinear PA carefully.Secondly, the passive elements including resistance, capacitance and inductor in CMOS have been studied, after the analysis of the models of the capacitance and the inductor, many method of analysis and optimize the on-chip inductor are explained.Thirdly, a state-space method to model and analyze the class E power amplifier's operation has been present. after the explanation on the state-space model and the design method of class E power amplifier, we implemented class E power amplifier in TSMC 0.35μm SiGe BiCMOS technology, the simulating results finally proves that the accuracy and feasibility of this method.Next, we optimize the structure of the traditional class E power amplifier, including differential and cross-coupled feedback structure. The results by simulating the power amplifier using TSMC technology at 1.8GHz proves changes improved the performance efficiently, at last we finished the layout of this class E power amplifier. |
PDF Full Text Request