Design And Implementation Of Micro-power Large-capacity EEPROM Used In Internet Of Things

Recently,the Internet of things(IOT)with the huge development which was known as the third evolution of the world information industry after the computer and the Internet,has attracted enormous research interest.In the system,the memory is the main part of IOT chips to directly decide the market prospect of IOT chips.EEPROM is the main choice of IOT chips,which are short of high cost,large power consumption,small capacity and so on.Therefore,this paper aims at studying and designing a micro-power and large-capacity EEPROM memory for IOT chips.The scheme of power supply that multiple power supply different circuit blocks at different time is adopted to reduce power consumption as much as possible when the overall scheme was designed;In order to ensure reliability,we choose the block–sub-block system for the EE_cell array;And the dummy tubes are set up around every block to avoid the disturbing between EE_cells.The peripheral circuits are improved in this paper,such as high-voltage charge pump,sensitive amplifier and decoding circuit.The CTS charge pump is employed as high-voltage charge pump instead of the traditional Dickson charge pump,which has lower power consumption and more efficient energy transfer efficiency.As for the problem of traditional CTS charge pump's peak current cause failed operation,we propose a divided-frequency and delay drive clock mechanism to decrease by about 200?A.Then a new structure is adopted in this paper to avoid the high power consumption and complex structure of traditional sensitive amplifier.The new structure detects data by discharging speed of EE_cell,thus dislodging the current reference and reducing power consumption effectively.We employed the method of step by step to build 4 parts decoding circuit to supply the working part to reduce the layout area and the power consumption,solving the problems of complex larger area and higher power consumption caused by large capacity effectively.This paper completes the design of a micro-power and large-capacity EEPROM used in the IOT chip,which adopts SMIC 0.18?m EEPROM 2P4M technology.And the layout is full custom design.After the simulation in the cadence software platform,the results of post-simulation show that the capacity of the EEPROM is 64K bits,the maximum read average current is 6?A,the maximum write average current is 6?A,and the layout area is0.925?m~2.The test results show that the EEPROM has normal functions,the stability in the-17?~65?range.The supply voltage is just dropped about 0.5V by the proposed charge pump's peak current suppression technology.