Research On Flexible Resistive Random Access Memory Based On Perovskite Structure Oxide

In recent years,with the rapid development of the information storage industry,high-performance,low power consumption,rapid switching speed,high-density integration,and non-volatile memory has attracted extensive attention to be used in electronic devices.In this circumstance,a good candidate for next generation non-volatile memory concept called resistive switching random access memory?RRAM?which has easy structure of “sandwich” has recently attracted a great deal of attention due to its advantages.And then,prosperous development of the Internet of things and wearable memory devices proposed flexible property to the RRAM.The performance of flexible resistive switching devices was decided by intermediate layer materials and its characteristics.Until now,graphene oxide and transition of sulfide material became ideal material which used for prepare flexible resistive memory devices due to its two-dimensional feature.The research results also revealed that traditional resistive switching memory devices based on perovskite oxide would provide a fair resistance property.As we know,perovskite oxide combined by ionic bond would difficult to embody two-dimensional behavior like graphene.Whether and how to realize flexible resistive switching memory devices which make perovskite oxide as resistive switching layer and got highly performance are key problems which we concern and the paper will solve.On the basis of above thinking,we have prepared flexible resistive switching memory devices using two-dimensional perovskite oxide nanosheets as resistive switching layer.We discovered many preparing methods,combined various means,and got results are as follows,1? K₂Ti₆O₁3 nanowires were transformed into Pb Ti O3 nanosheets by a two-step hydrothermal synthetic strategy.Non-volatile memory effects,namely write-once read-many-times memory,were observed in the flexible memory devices with the configuration of Al/Pb Ti O3/Al/PET.The resistive switching characteristics with low switching voltage?2.4 V?,high resistance ratio?102?and good mechanical flexibility have been investigated in the memory devices,which reveal excellent data retention and endurance characteristics.2? SrTiO₃ nanosheets were synthesized successfully by hydrothermal method and then we used magnetron sputtering,vacuum-filtration method,spin-coating method,and evaporation coating preparation method in order to prepare the film with good flexibility and two-dimensional durability of Ag/PVP-Sr Ti O3/Pt/PET devices and different thickness of Ag/Sr Ti O3/Pt/PET device.The write-once-read-many times resistive switching characteristics were found based these memory devices.For different thickness of Ag/Sr Ti O3/Pt/PET device,we got the results of resistance switching voltage related to the film thickness.The memory device resistance characteristics with switching voltage is 2.38 V,the ON/OFF ratio is 10 and has good flexibility,but the device's durability is not good enough with 0.5 m L solution as precursor preparation.For Ag/PVP-Sr Ti O3/Pt/PET device,the switching voltage is 0.17 V,the device ON/OFF ratio is 103 and the device has a good 2D flexibility and durability,by compare with the device by using vacuum-filtration method,the resistive switching activities has improved significantly.3? On the basis of above two works and considering magnetic characteristics of Bi Fe O3,we synthesized Bi Fe O3 nanosheets and prepared instruments of Ag/Bi Fe O3/Pt/PET and Ag/PVP-Bi Fe O3/Pt/PET.The former one presented bipolar resistive switching behavior,switching voltage is 2.55 V,closing voltage is-3.55 V,ON/OFF ratio is 103.The later one embodied feature of write-once-read-many-times,switching voltage is 1 V,ON/OFF ratio is 105.Both of them have favorable two-dimensional flexibility and durability.