Research On Thin-film Ga₂O₃-based Resistive Device And Its Read-write Circuits

With the rapid development of integrated circuit and semiconductor technology,the requirements of device size,device performance and device loss and energy consumption are also increasing.At present,the mainstream semiconductor memory is mainly divided into non-volatile memory devices and volatile memory devices.The existing volatile memory can not fully meet the technical requirements of high-tech electronic products,and the disadvantages of traditional semiconductor materials are gradually showing.Resistive memory has special advantages such as high integration,low power consumption and fast reading form,which cannot be replaced by other memory.As a material for the preparation of resistive memory devices,gallium oxide,as a representative semiconductor material of the fourth generation of ultra-wide band gap,has excellent radiation resistance,high cut-off frequency,excellent thermal stability,high anti-radiation performance and other characteristics.Based on this,this thesis mainly carries out the research on the preparation of resistive devices based on gallium oxide films and the research on the read and write circuits,which provides the relevant theoretical and practical basis for promoting the development and application of the resistive memory based on oxidation.In this thesis,a thin film gallium oxide resistive memory device is first prepared,and different materials suitable for the preparation of resistive memory devices are analyzed.Therefore,binary metal oxides with low preparation difficulty,good stability,high integrability and strong compatibility with semiconductor process are selected as the main materials for the preparation of resistive devices.Then,the characteristics of binary metal oxides are analyzed.Finally,gallium oxide,an ultra-wide band gap semiconductor material,was selected for experimental preparation,and the prepared thin film gallium oxide devices were characterized by morphology,so as to observe the film growth of the thin film gallium oxide resistant devices with different preparation times,and explore the best preparation conditions.Secondly,the resistance performance of gallium oxide films was tested by magnetron sputtering under different atmosphere conditions and preparation time.In this thesis,the magnetron sputtering method is used to prepare gallium oxide thin film,which focuses on exploring the influence factors of magnetron sputtering method on the morphology of the thin film prepared under the condition of the same power and different preparation time.The top electrode material is mainly silver metal electrode and carbon electrode,and the resistance device based on gallium oxide resistance layer is prepared with FTO substrate as the bottom electrode.Then,the performance test of the prepared gallium oxide resistive layer device samples was carried out to analyze its resistive characteristics,so as to obtain the best scheme for the preparation of thin film gallium oxide resistive devices.Then,in order to carry out effective read and write operations on the resistive memory,the peripheral read and write circuit is designed by modules,and the influence of various parameters in the improved model on the electrical characteristics of the resistive memory model is compared by optimizing the resistive memory model,and the influence of different window functions on the resistive memory model is explored.The effects of various parameters in the model on the resistive characteristics of the device are studied to make the resistive memory model more consistent with the electrical characteristics presented by the actual resistive memory device.Finally,the read and write circuits of the designed resistive devices are set with the read and write voltage control signals of different clock signals to carry out data reading and writing simulation,and the circuit structure,device selection and parameter setting are optimized.The experiment verifies that the read and write circuit proposed in this thesis can correctly read and write gallium oxide resistive memory devices.