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Resistive Memory Design Based On Embedded Applications

Posted on:2011-09-21Degree:MasterType:Thesis
Country:ChinaCandidate:G JinFull Text:PDF
GTID:2358360305998672Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
With the development of VLSI technology, the System On Chip (SOC) technology can implement the processor, memory, analog circuits and the interface logics on single chip. Nowadays, the embedded non-volatile memory has become one of important parts of SOC systems. Traditional embedded non-volatile memory has its disadvantages in scalability, cell size, operation speed, power and chip size, which limit it application in future SOC systems.Among the novel non-volatile memories, Resistive Random Access Memory (RRAM) are promising for its advantages such as scalability, compatibility with standard CMOS process, small cell size and low operation power.In this paper, a novel 2T2R memory cell structure was proposed based on the RRAM cell, which can reduce the effects of process violation and improve the security of memory data. Two test chip have been designed, one for high speed data reading and the other for low power storage in RFID tag.This paper described the memory structure, array and the peripheral circuits of the two test chips. Fast reading technology and a novel low power programming technology with feedback circuits have been proposed. Furthermore, improve programming and reading circuits has been designed in the test chips. The two test chips have been tape-out in SMIC's 0.13um standard CMOS logic process.
Keywords/Search Tags:Resistive Random Access Memory, RRAM, SOC, embedded non-volatile memory, 2T2R, high speed read, RFID, feedback programming circuits, low power
PDF Full Text Request
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