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A Design Of Logic Operation Circuit Based On Resistive Random Access Memory And Peripheral Writing/Reading Circuits

Posted on:2019-08-02Degree:MasterType:Thesis
Country:ChinaCandidate:D Y FanFull Text:PDF
GTID:2428330545990204Subject:Integrated circuit engineering
Abstract/Summary:PDF Full Text Request
According to the most extensive computer architecture today is Von Neumann architecture,the conventional computer design separates the memory and the processor,which means the processor and the memory links through the data bus.However,this architecture which separates the processor and the memory leads to"Von Neumann bottleneck" as people need to process more and more data.The "Von Neumann bottleneck" dramatically limits the speed of the computer performance and causes the "Memory Wall" issue.To come across this problem,researchers are eager to find a more advanced architecture.Then the concept of in-memory-computing is proposed that combining the computer's processor and memory to perform calculations in memory.This puts higher requirements on memory devices.As a novel technology,Resistive Random Access Memories(RRAMs)have gained high attention as a candidate in the next generation of emerging memory,because of its non-volatile storage characteristics and its excellent electrical properties.RRAM can be used not only as a memory device for data storage,but also as a processor for digital logic operations.RRAM may become an important part of the future computer architecture for the combination of computing and storage.However,at the same time,the development of RRAM is still in the stage of theoretical research,and its temperature characteristics are still not stable and need to be improved by circuits level.Some papers have been discussed about the logic calculation based on RRAM,so this paper uses new computing logic which is called Majority Inverter Graphs(MIG)to design a more efficient computing circuits than the predecessors.At the same time,it also pays attention to the temperature characteristics of RRAM and designs the peripheral read/write circuits of the memory chip which improves the stability of RRAM at different temperatures.The main work of this paper is as below:First,this paper designs an efficient full-adder circuit and extends to design a multiplier circuit based on RRAM by a new computing logic which is Majority Inverter Graphs.Comparing with the traditional logic of "Implication",the calculation step of the adder in this paper is the least.What is more,this method decreases the complexity of the applied voltage and reduces the errors,which makes the computing simple and efficient.The circuit verification of this adder designed in this paper can be performed the addition operation correctly.Furthermore,this paper addresses the characteristics of RRAM with temperature changes.It designs a write-verify circuit and a self-adaptive sensing amplifier to come across temperature issues.Although the writing speed is sacrificed but the accuracy of the storage is improved and reduced errors during calculating by the data verifying.From the reading part,the circuit can change the size of the reference signal according to the different temperature conditions to ensure the correctness of the readout by the self-adaptive sensing amplifier.At last,through simulation and experimental verification,the RRAM make the in-memory-computing possible and it provide a new type of computer architecture in the future.And by the design of the peripheral circuit,the temperature stability of the RRAM chip can be improved and the operating temperature range is broadened.
Keywords/Search Tags:Resistive Random Access Memory(RRAM), In-Memory-Computing, Majority Inverter Graphs(MIG), Adder, Multiplier, Write Verify, Self-Adaptive Sensing Amplifier
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