Numerical Simulation Of Pure NBTI Effect And Drain Bias NBTI Effect

In recent years,with the rapid development of Internet technologies such as big data and deep learning,people have become more and more demanding on the performance of processors,which has promoted the vigorous development of integrated circuits.With the further reduction of the feature size of integrated circuits,reliability issues have become more and more prominent.Among them,the most important factors include the negative Bias Temperature Instability(NBTI)effect.At the micro/nano scale(channel length less than90nm),the NBTI effect is more prominent than the degradation of p MOSFETs caused by the channel hot carrier effect,which seriously threatens the reliability of the device and the circuit.Therefore,the research on the NBTI effect becomes a new focus of reliability research.However,when the device is actually working,the source of the channel interface charge is complex and it is impossible to know the influence of NBTI effect on the device itself.Therefore,it is more important to use TCAD numerical simulation method to study NBTI effect.However,most of the current TCAD numerical simulation software is monopolized by some large-scale commercial companies abroad,and it is impossible to carry out secondary development of software based on people's own needs.When there is need to study such as pure NBTI and Drain Bias NBTI effects,there is no way to proceed.The corresponding numerical simulation studies have greatly hindered the scientific understanding and innovation of these issues.This article seizes this opportunity and conducts corresponding work on the study of NBTI effect.First of all,the paper analyzes and studies NBTI effect mechanism,then through the secondary development of the existing device simulation software,constructs a new algorithm and tool,establishes an interface charge degradation model,and combines NBTI degenerate hydrogen molecule's drift diffusion model.The reaction diffusion model and the two-dimensional numerical simulation software for semiconductor devices were jointly calculated.Finally,using the existing scientific research results and the physical laws of the devices,the rules of pure NBTI and Drain Bias NBTI effects were briefly analyzed.During this work,the author mainly carried out the following parts of the work:(1)Through the literature review,the NBTI effect mechanism of p MOSFETs is analyzed and studied in detail.Based on the existing internal and external data,a NBTI effect calculation model is deduced.(2)In the numerical simulation software Genius-Open,NBTI drift diffusion model is added,NBTI degradation algorithm is designed,and NBTI effect is simulated with the two-dimensional device simulation software.SZU-NBTI was completed to calculate the charge generated by the degradation of NBTI and its effect on device performance.(3)Using SZU-NBTI device simulation software to study the influence of NBTI effect on the device parameters and the mechanism of its generation,analyze the device factors that affect NBTI effect,and give appropriate recommendations so that during the actual production of the device,minimize the impact of NBTI effects on device performance.(4)The drift-diffusion model with drain bias NBTI effect is analyzed and transplanted into the numerical simulation software Genius-Open.The effect of drain bias NBTI effect on the device performance is studied,and some rules of drain bias NBTI effect are explored.