A 150GHz Power Amplifier Based On Eight-Path Power Combined Network

As the development of RF wireless communication technique and CMOS technology,people begin to study terahertz wave.Comparison with the traditional 5G radio frequency band,Terahertz frequency band shows more advantages and broad application prospects ? The wireless communication system is the basic components of these applications,so the study o f terahertz wireless communication system has become a hot researc h,this paper is devoted to focus on the research of terahertz power amplifier which is an important module of the front end of the terahertz w ireless communication system.Firstly,this paper introduces the characteristics and application of terahertz technology and research status of terahertz communication system,and then introduces the important role of terahertz power amplifier in the whole RF front end system and the design difficulties of Terahertz power amplifier at the present time.Secondly,the basic concept of RF power amplifier is introduced.It introduces the important design indexes include output power,efficiency,power gain and so on.Then it introduces the classification of power amplifier and impedance matching principle,and then leads to the introduce of the loadpull matching technology.In addition,this paper introduces the important technology in the design of power amplifier which is power combined technique.Finally,the stability criterion of RF amplifier is given.Thirdly,this paper gives the design method and design flow of the proposed 150 GHz power amplifier based on eight way power combin ed network.It introduces the gain optimization method and how to tap the potential of single transistor,then it introduces the design methods of many important passive devices include balun,transmission line,fingercap,GSG pad also the design of impedance matching networks.Besides,it introduces the design of the power combiner and power splitter.At last,it gives the iteration design methods of the whole amplifier and the schematic and layout of the proposed amplifier are given.Finally,This paper gives the simulation results of the proposed amplifier,and make the analysis and explanation of the simulation results,The work of this article is compared with the existing work in the world,which shows the superiority of this design,.The test results of the chip are given.The differences between test results and simulation results are analyzed and explained.Also the test results verify my design.