Research On High Voltage High Power Integrated Operational Amplifier

Except for the universal analog chip functions of the signal sampling,comparing,amplifying and operation,high voltage power integrated operational amplifiers are suitable for occasions which need small volumes and high output power for its high voltage high output current characteristics and are applied in the electronic equipment whose output stage needs high power output.High voltage power integrated operational amplifiers have a wide range of applications in industrial control systems,communications,automotive electronics,rail transit,new energy power saving,military or civil used aerospace and weapon equipment.For example,motor driving and gyroscope driving in industrial control systems and civil used aerospace,audio amplifier and ignition device in automotive electronics,power converters in rail transit and power supply arrays in locomotives.High voltage power integrated operational amplifiers are the key devices in various weapon equipment.It has significant importance on the research of high voltage high power integrated operational amplifiers for its extensive applications in military and civil used products.High voltage high power integrated operational amplifiers have high power output,high operating voltage and high operating current.The designed chip in this project is centered around three aspects in monolithic,high voltage and high power.The whole monolithic high voltage high power operational amplifier takes monolithic integration to implement high operating voltage and high output current and achieves smaller volume and high reliability without any peripheral auxiliary circuits,which is different from common hybrid integrations or modules implement on multi-chips and peripheral auxiliary circuits.This research on monolithic high voltage high power operational amplifier has accomplished the circuit design,circuit simulation,layout and layout verification based on P-JFET and bipolar compatible 6 ?m/80 V power technology.Input stage implements JFET differential pair configuration which effectively reduces the offset parameters of the circuit.The middle stage implements common-collector common-emitter configuration which achieves high voltage gain.The output stage implements dual terminals input Darlinton topology which achieves 3A output specification.It choses thermal detection and self-heat dissipation circuit topology to automatically adjust the temperature of the substrate in the design of the power module.This work finishes the simulation analysis of the whole power operational amplifier.All specifications meet the anticipated design requirements and the output power has achieved of 38.25 W.Layout design of the whole circuit is finished according to the designed circuit topology,and passed the DRC verification.