Study On Thermal Reliability Of Monolithic High-Power Operational Amplifie

Monolithic high-power operational amplifiers are widely used in industrial control,aerospace,weapon equipment,automotive electronics and other fields.Because of its long-term work in high voltage and high current conditions,it will lead to serious heat when the chip works,and the reliability problem is very prominent.It is of great scientific significance and practical value to study the thermal reliability of monolithic high-power integrated operational amplifier.To improve the thermal reliability of high-power chips,design and optimization can be carried out from both chip and package levels.Improving the thermal reliability of power chips from the package level is relatively easy to implement and low-cost,but it cannot fundamentally reduce the heat generation of the chip.In order to improve the thermal grooming ability of the chip and reduce the unnecessary heat of the chip,this paper studies the thermal reliability of the monolithic high-power operational amplifier chip from the aspects of circuit optimization,layout design and back-side thermal grooming,and gives a design scheme to improve the thermal reliability of the chip.The specific research content of this paper is as follows:1.From the perspective of improving the internal heat dissipation of the chip,the back heat dissipation structure of the high-power chip is designed by using the silicon via technology,and the heat dissipation structure is optimized and simulated.The advantages and disadvantages of the chip back substrate thinning technology and the same type of back heat dissipation structure are compared under the same conditions.2.In order to better study the thermal reliability of the monolithic high-power operational amplifier chip,the monolithic high-power operational amplifier circuit is designed,and the circuit is designed,simulated and optimized.The simulation results of various parameters are combined with the expected requirements.3.Layout design,verification and reliability optimization of single-chip high-power operational amplifier are carried out.The key points affecting the chip thermal reliability in the layout design of the mono-chip high-power operational amplifier are expounds,the chip layout is designed,and it has passed the DRC and LVS verification.The post-layout simulation is carried out,and the results meet the expected parameters.In addition,the electromigration of the high-power output stage,the voltage drop of the power line,and the thermal distribution of the metal interconnect of the high-power output stage are simulated and optimized.4.The backside heat dissipation structure proposed in this paper is applied to monolithic high-power operational amplifier.Based on the analysis of heat transfer and electro-thermal coupling,the effectiveness of the backside embedded heat dissipation structure in improving the thermal reliability of monolithic high-power operational amplifier is verified.