Research On GaN HEMT High Performance Power Amplifier

The operating frequency of the power amplifier is currently developing in the direction of high-frequency and broadband.At the same time,the high efficiency of the power amplifier will help to reduce the cost of heat dissipation.Besides,the high output power will help to improve the signal coverage area.This thesis is the study of broadband power amplifier and Class-F power amplifier with harmonic control.A Class-F power amplifier operating at 0.8~2.7GHz and two other broadband power amplifiers that work on 0.8~3GHz and 3~6GHz,respectively,are designed.First of all,this thesis provides a brief overview of the research background and research situation about Class-F and broadband power amplifier in nowadays.Secondly,it not only introduces the basic theoretical knowledge of broadband power amplifier,but also explains the choice and usage of passive devices in bias circuit,and output matching circuit,at the same time,the basic design method of Class-F power amplifier is introduced,and two typical structures of harmonic control are listed.Then the designed power amplifier module is simulated and processed respectively.The first module uses Cree Semiconductor's Ga N HEMT transistor CGH40025 F,through the three and all even harmonics are controlled,to adjust the drain current and voltage waveform,thus effectively improving the power amplifier output power and efficiency.The final test results show that the saturation output power is higher than 43 d Bm in the frequency band of 0.8~2.7GHz and the relative bandwidth of 109%,the average drain efficiency is higher than 60% and the gain is higher than10 d B;the second module uses the transistor CGH40010 F,the use of stepped-impedance matching design of a work in the 0.8~3GHz broadband power amplifier.The final test results show that the relative bandwidth of 116%,the saturation output power is higher than 40 d Bm,drain efficiency is higher than 50%,the gain is higher than 9d B.The third module uses Ga N HEMT chip TGF2023-2-02 to design power amplifier,which connects microstrip lines and chips by using bonding wires.The multi impedance matching approach are employed for broadband impedance matching.The simulation results show that the saturation output power is greater than 39 d Bm in the range of 3~6GHz,and the drain efficiency is higher than 40%,and the gain is higher than 9d B.Overall,this design is generally completed successfully and can simultaneously take into account bandwidth,output power and efficiency.