Research On Class F Power Amplifier

The rapid development of the fifth-generation mobile communication technology has made high-frequency,ultra-wideband,and high-speed communication an inevitable trend.This puts higher demands on the RF front-end circuit in the communication system.The RF power amplifier,which is the key module circuit of the RF front-end circuit,has an important influence on the performance of the entire communication system.Ultra-wideband and high-efficiency RF power amplifiers will inevitably play an important role in future multi-carrier wireless communications.Based on the trend and requirements of future communication development,this thesis combines the latest switching class F power amplifier technology to research and develop a broadband high-efficiency Class F power amplifier suitable for future wireless communication.Firstly,the thesis mainly expounds the development trend of the communication industry and the necessity and feasibility of the development of high-efficiency Class F power amplifiers.The latest research trends of high-efficiency Class F power amplifiers in domestic and overseas are summarized and summarized through reviewing the literature.Secondly,the basic theory of RF power amplifier design is introduced,and several parameters used to characterize the performance of the power amplifier are introduced.In addition,several methods for improving efficiency and linearity commonly used in power amplifier design are introduced,as well as the Load-Pull system commonly used in the actual design of power amplifiers.The basic theory of Class F power amplifiers is then described in detail.At the same time,the principle of high efficiency of Class F power amplifiers is explained from the perspective of voltage and current.Finally,two harmonic control circuits,lumped parameters and distributed parameters,are introduced to control the harmonics of the output signal,so that the power amplifier operates in the F class and achieve high efficiency.It provides a theoretical basis for the design of high efficiency Class F power amplifiers.Then,a Class F power amplifier operating at 2.7?3.7GHz was simulated in the high-frequency simulation software ADS,and processed and micro-assembled based on Cree Semiconductor's GaN HEMT CGH40010F.The key points to be noted for the micro-assembly of RF power amplifiers are also described.At the same time,the composition and test points of different test systems of RF power amplifier are introduced.Then the large signal and small signal characteristics of the RF power amplifier are tested and analyzed.The final test results show that the saturated output power is greater than 40dBm,over 60% drain efficiency can be achiveved,and the gain is greater than lOdB in 2.7?3.7GHz.The design specifications meets the required in this thesis.