Research And Design Of Silicon-based Millimeter-wave Amplifier

In recent years,with the rapid development of next-generation information and communication technologies such as the Internet of Things,artificial intelligence,and 5G mobile communication,there is an exploded growth trend of the demand for global data traffic.To meet future customer's urgent demand for huge communication data flow and high-speed transmission rate,the operating frequency of the wireless communication system jumped into millimeter-wave frequency band where there are more abundant spectrum resources.With the superiorities of low cost,low power consumption and high integration,silicon-based millimeter-wave communication chips gradually replace the market position of III-V semiconductor based chips.Basically,research and production of high-performance silicon-based millimeter-wave communication chips are of crucial importance to develop high-speed wireless communication systems.As a key circuit module in millimeter-wave wireless communication systems,the performance of the millimeter-wave amplifier has a determinative role in the communication quality of the communication systems.The low-noise amplifier usually determines the sensitivity of the communication systems,and the power amplifier has a very direct influence on the communication distance and efficiency.Therefore,it is a prerequisite to develop siliconbased high-performance millimeter-wave amplifiers for the study of wireless communication systems.The main contents of this thesis include:First,a detailed investigation of silicon-based millimeter-wave amplifiers was conducted,and techniques for improving the linearity,efficiency,and output power of the power amplifiers,as well as noise figure,gain,and bandwidth improvement techniques for low-noise amplifiers were summarized.Then the main performance characteristics of the amplifier and their significance were introduced.The noise source and equivalent model of MOSFET and BJT transistors were introduced and analyzed as well.And then,noise reduction technology and gain enhancement technique for millimeter-wave amplifier were thoroughly studied.Finally,the design of the two amplifiers was analyzed in detail.To solve the noise figure issues of the amplifier,a low-noise amplifier based on a 0.35-?m SiGe BiCMOS process was designed using body-floating technique for the first time in the Ku-band.Based on the traditional common source structure,this amplifier uses triple well process MOSFETs based on substrate suspension technology at the first and second stages.The simulation results show that in the 12-18 GHz band,the amplifier has a power gain greater than 18.5 dB,a minimum noise figure of 3.2 dB,and an output P1 dB of 8.6 dBm.The body-floating technique improves the noise figure of the amplifier by 1 dB.The design of this Ku-band low-noise amplifier lays the groundwork for subsequent millimeter/terahertz amplifier research.To tackle low gain drawbacks of millimeter-wave/terahertz amplifiers,a F-band differential amplifier based on a 0.13-?m SiGe Bi CMOS process was designed using a common-gate inductive feedback technique.The amplifier uses a four-stage differential cascode structure based on a common-gate inductive feedback gain enhancement technique to ensure sufficient power gain,and T-type matching network is used for interstage matching to achieve a wideband frequency response.Modified Marchand baluns are employed at input and output to realize the mutual conversion of differential and single-ended signals.The simulation results show that at a supply voltage of 1.8 V,the differential amplifier has a peak gain of 21.7 dB with 3 dB bandwidth of 30 GHz from 102 GHz to 132 GHz,and a-3.3 dBm output P1 dB at 120 GHz.