Research And Design Of Silicon-based Milimeter Wave Low Noise Amplifier

With the development of communication systems,spectrum resources have become more and more tense,and the emergence and development of 5G communication systems have effectively solved this problem.Because the 5G communication frequency bands mainly include Sub 6G and millimeter wave frequency bands,especially the millimeter wave frequency band has the advantages of rich spectrum resources and high communication speed,and due to the progress of silicon-based technology in recent years,it can meet the design of millimeter wave circuits,so More and more research and applications are based on silicon-based technology to realize millimeter wave circuits.As the first module of the receiver in the communication system,the low-noise amplifier plays a role in amplifying weak signals and suppressing the noise of the subsequent modules.Therefore,its performance affects the noise figure and sensitivity of the entire receiver and is the most critical one in the receiver.section.Therefore,the research and design of silicon-based millimeter-wave low-noise amplifiers are of great significance.In the introduction,this article briefly explains the research background of siliconbased millimeter-wave low-noise amplifiers,and summarizes and summarizes the development and current status of low-noise amplifiers at home and abroad in recent years.In the theoretical part,the introduction and analysis of active devices and passive devices are carried out,and the main performance indicators,traditional structure and innovative structure of the low noise amplifier are introduced and analyzed in the subsequent chapters.The first 26 GHz low noise amplifier introduced in this article is designed and taped out based on the 65-nm CMOS process.The amplifier consists of a three-stage differential amplifier circuit.The first two stages adopt an improved transconductance enhancement structure to obtain a broadband low noise figure;the output stage adopts a neutral capacitor structure to compensate for the high-frequency loss of the first two stages of gain to achieve broadband high The purpose of gain.The final test result is: 3dB bandwidth is 23 GHz to 31 GHz,in-band power gain S21 is greater than 20 dB,in-band S11<-10 dB,S22<-6dB,NF<3.3dB,power consumption is 34 m W.The second 5G millimeter wave low noise amplifier introduced in this article is designed and taped out based on 65-nm CMOS process.The amplifier adopts a singleended structure,the first two stages adopt a source degeneration inductance structure and a multi-cavity input matching network to obtain ultra-wideband low noise figure;the output stage adopts a folded transconductance enhanced cascode structure,The high gain of this structure compensates for the high frequency loss of the first two stages of amplifiers,and finally realizes an ultra-wideband gain curve.The final post-simulation results are: peak gain is 21.6dB,3dB bandwidth is 16-44.5GHz,1dB bandwidth is 17-42 GHz,S11<-10 dB,S22<-8dB,NF<3.6dB,power consumption within 1dB bandwidth30 m W.