Research On Silicon-based Integrated Microwave And Millimeter-wave Amplifier Circuits

With the rapid development of the mobile Internet,the requirements of communication rates are increased.In order to achieve higher communication rates,researchers have conducted extensive researches and designs on silicon-based microwave and millimeter-wave circuits.As core modules of the transceiver,the power amplifier and low noise amplifier directly determine the communication distance and data rate of the whole system.This dissertation focuses on silicon-based microwave millimeter-wave power amplifiers and low-noise amplifiers.The main research contents are as follows:1.The research of the silicon-based millimeter-wave power amplifiers.The advantages and disadvantages of the existing transformer-based power combining techniques are analyzed.A transformer-combining network with a full balance of port impedance is proposed.The imbalance of port impedance in the network is less than <8% so that the combining efficiency of multi-way power amplifier is improved.The 45 GHz and 60 GHz power amplifiers are designed based on the transformer-combining network.The amplifier is fabricated in a 90 nm CMOS process.Moreover,the 45 GHz amplifier achieves the maximum output power of 21 dBm and the drain added efficiency of 14.5%.The 60 GHz amplifier achieves the maximum output power of 21 dBm and the drain added efficiency of 13.4%.2.The research of the silicon-based microwave and millimeter-wave low noise amplifiers.The advantages and disadvantages of some amplifier structures are analyzed.Based on the analysis,a Ku-band amplifier is designed with the cross-capacitors.In order to reduce the chip area,a matching network based on rectangular inductors and transformers is designed,which reduces the core area of the amplifier by almost a half.In order to increase the gain of the 180 nm CMOS transistor at 24 GHz,an enhanced neutralization capacitor technique for a cascode amplifier is proposed.The amplifier achieves the maximum gain of 19.3dB.Based on these,a 38 GHz low noise amplifier for 5G communication is researched.The amplifier combines the transformer-based transconductance enhancement technique,the neutralization capacitor technique,and the transformer feedback technique to improve the gain and to reduce the noise figure and power dissipation.The amplifier achieves the gain of 31 dB and the noise figure of 3.9dB.The amplifier is combined with an attenuator to form a variable gain amplifier based on the 65 nm CMOS process.The variable gain amplifier achieves the gain of 21 dB and the gain tuning range of 31 dB.3.Based on the previous researches of low noise amplifiers,a single channel receiver front-end for the phased array radar is designed.The receiver consists of three Ku-band amplifiers,a passive attenuator and a passive phase shifter.With transformer and phaseneutralized capacitors,the chip area and phase shift of attenuation states are reduced.The receiver achieves the maximum gain of 21 dB and the minimum noise figure of 6.7dB.