The Design Of Silicon-based 140GHz/220GHz Low Noise Amplifier

Millimeter-wave(mm-wave)has broad prospect in communication,radar,radio astronomy and imaging detection and so on.With the increasing demand of high-speed mm-wave wireless communication system,significant breakthrough has been made in mm-wave technology such as the research of transceiver and mm-wave devices.And with the increasing cut-off frequency of devices,the design of millimeter wave system is moving towards a higher frequency band.Among them,140 GHz and 220 GHz are two atmospheric windows,and the mm-wave at these two frequencies has lower attenuation when passing through the atmosphere.In this thesis,the silicon-based millimeter-wave high gain low noise amplifier is taken as the research object,and the LNA circuit working in 140 GHz and 220 GHz frequency band is studied and designed.the main research contents are as follows:Firstly,the research background and significance of mm-wave LNA is discussed in this thesis,then the research status at home and abroad is investigated and the circuit characteristics of mm-wave LNA is summarized.1.The design of 140 GHz high-gain low noise amplifier.The LNA circuit is designed based on the IHP 0.13 m SiGeBiCMOS process.The circuit adopts a singleend structure,which is composed of two stages of Cascode and one stage of common emitter.In the first two stages,gain-boosting technology is adopted to improve the gain of single-stage amplifier,and microstrip line is used to realize the input and output and inter-stage matching.Finally,the peak gain of 32 d B is achieved.The operating frequency range of the circuit is 127 GHz to 150 GHz,3-d B bandwidth is 27 GHz,and the noise figure in the operating frequency range is less than 6d B.2.The design of 220 GHz high-gain low noise amplifier.The circuit is also designed based on IHP 0.13?m SiGeBiCMOS process,and the LNA is composed of four stages of differential cascode.The first stage reduces the noise through inductance neutralization technology.In the following three-stage circuits,the(HBT collector)capacitance neutralization technology is used to improve the isolation of the singlestage circuit and facilitate the unidirectional design.The bandwidth of LNA is effectively improved by using the multi-frequency point superimposed impedance matching technology which distributes the peak gain of each amplifier at different frequency points.Finally,the LNA designed in this thesis achieves the gain of 20.4d B and the noise figure of 10.5d B at the central frequency of 220 GHz.The gain flatness in the frequency range of 208.8-234 GHz is within 1d B,and the 3d B bandwidth of the circuit reaches 45GHz(197-242GHz).