Design Of Floating P-zone Structure CSTBT

With the continuous development of power semiconductor devices,there is a growing variety of power discrete devices including diodes,transistors,MOS transistors,thyristors,IGBTs,etc.These devices have their own characteristics.If they can be used reasonably,they can basically meet the needs of different fields.Taking IGBT as a representative,foreign countries have formed a relatively complete product supply chain.This is due to the large amount of early efforts of numerous research institutes,universities,and R&D institutions in foreign countries,and has now formed a more detailed guiding theory.Compared with foreign countries,there is still a lot of design process for IGBTs in China.Based on this,this paper proposes to design a CSTBT with a floating P-zone structure.This paper first introduced the IGBT commercialization process,which mainly reflected the evolution of the IGBT cell structure,and then analyzed the trench gate technology and carrier enhancement technology used in the cell structure of the new generation IGBT product CSTBT,and later introduced the use of The two types of trench gate IGBTs for the carrier enhancement technology,including the trench gate IEGT and the trench gate CSTBT,analyze some of the measures for enhanced carrier distribution in the two structures.Finally,a CSTBT with a floating P zone structure is proposed.In this paper,the process menu of the CSTBT cell structure of the floating-p region structure is designed in combination with the process conditions that can be provided by domestic semiconductor manufacturing plants,and then the N-drift region,P-type region,CS layer,and floating region are adjusted by simulation tools.The key process parameter values ??in the P region,trench,and cell region,the final cell design result is a withstand voltage of 817 V,a turn-on voltage drop of 1.7V,a threshold voltage of 5.6V,and a current fall time of 75 ns to meet the design specifications.The request.The CSTBT terminal part of the floating P area structure adopts the field limiting ring plus the full field board structure.Through the terminal simulation,the specific parameters of the terminal part are determined,and finally the CSTBT layout parameter design of the floating P area structure is completed.The final design of the floating P-zone structure CSTBT satisfies the requirements of this paper,and the design process has certain reference significance.