Characteristics And Key Parameters Optimization Of Carrier Enhanced Efp CSTBT

With the development of power semiconductor devices,the performance and reliability requirements of semiconductor devices in various fields are becoming higher and higher.Insulate Gate Bipolar Transistors(IGBTs)have large input impedance,low driving power,and low switching losses.The advantages are widely used in defense,medical,power transmission,renewable energy,aerospace and other fields.IGBT,as a very important power electronic device in the field of DC transmission,how to reduce the IGBT's on-state voltage drop,operating loss,and switching loss while increasing the device's blocking voltage and improving the device's working efficiency is of great significance to environmental protection and energy saving.The carrier-enhanced CSTBT(Carrier Stored Trench-Gate Bipolar Transistor,CSTBT)is more advanced in improving the IGBT turn-on saturation voltage drop.Its carrier storage layer can add a hole between the drift region and the P base region The barrier layer increases the carrier concentration on the emitter side and reduces the on-resistance of the IGBT.At the same time,it has the advantages of trench gate and field-stop IGBT.The trench gate structure area replaces the JFET region of the planar gate IGBT,eliminating the device junction field effect tube effect,reducing the device's on-resistance and improving The current density of the device and the field stop layer doped with a higher concentration of donors make the internal electric field of the device trapezoidal,thereby reducing the longitudinal size of the device.This paper extends the P-base region of a floating P-Base Carrier Stored Trench-Gate Bipolar Transistor(FP CSTBT),and proposes a structure with an extended floating P-base region CSTBT(Extend FP CSTBT,EFP CSTBT).The structure uses refined trench gate,field stop layer and electron injection enhancement technologies to reduce the on-voltage drop of the device,while extending the floating P-base region increases the blocking voltage of the device.Through simulation experiments under the same parameter conditions,the performance of EFP CSTBT is compared with traditional CSTBT and FP CSTBT.The results show that the new device has a higher blocking voltage.The simulation was conducted under the same blocking voltage,and the changes of the peak values ??of the electric fields of the three devices were observed.The simulation results show that the floating P-base region can improve the electric field distribution of the device and reduce the peak electric field of the device,and the performance is better than the traditional device.Through the process simulation,the process plan of extending the floating P base region was realized.The key parameters such as the doping concentration and depth of the P-base region of the EFP CSTBT,the doping concentration and thickness of the N-type CS layer,and the depth of the virtual gate were simulated and analyzed,and the best parameters were obtained.The results show that the on-state voltage drop and operating loss of EFP CSTBT are lower than CSTBT,and the blocking voltage is higher than CSTBT and FP CSTBT.It has good static characteristics and has good application and promotion value.