Study On The Preparation Of Crystal Based On ?-Ga₂O₃ By Optical Floating Zone Method And Its Properties

With the development of electronic information technology,wide band gap semiconductor materials have attracted more and more attention in the fields of light-emitting diodes,solar transparent electrodes and solar blind ultraviolet detectors.Gallium oxide with a direct band gap has become a new research hotspot due to its high band gap(4.9eV),excellent visible light and ultraviolet transmittance.In this paper,the ?-Ga2O3 single crystal was prepared by optical floating zone method,and the doping of gallium oxide crystal was studied.The properties of the crystal were characterized.The following results were obtained:(1)The process of preparing ?-Ga2O3 single crystal by optical floatation method was explored,and pure ?-Ga2O3 single crystal was prepared.The density of ?-Ga2O3 single crystal was 5.846g/cm3 by using Archimedes' principle.The properties of pure ?-Ga2O3 single crystal were characterized,including XRD,UV absorption spectra,photoluminescence spectra and electrical properties.(2)Different proportions of Mn-doped gallium oxide crystals were prepared and their properties were characterized.It was found that the Mn-doped gallium oxide at 10 at%,5 at%,2.5 at%and 1.25 at%are MnGa2O4 polycrystalline samples,while Mn doped gallium oxide 50 at%content is single phase polycrystalline sample.Moreover,Mn doping decreases the band gap of the Ga2O3 crystal,and Mn is present in the Mn2+and Mn3+valence states.(3)50at%Fe-doped gallium oxide and 10 at%Mg-doped gallium oxide crystals were prepared and characterized by XRD.Fe-doped gallium oxide and Mg-doped gallium oxide are not a single crystal of gallium oxide.