Power Devices Based On Floating Zone Technique

Smart Power IC plays a important role in today's fast changing society. The fabrication process and the power semiconductor device are the two main aspects which are analyzed and discussed in this thesis.In the first part, this thesis illustrates the general development of the fabrication process of SPIC, based on discussing different generation of the BCD process as well as the method of integrating power semiconductor device into the SPIC. After that, we try to develop a novel process which is help to reduce the specific on-resistance of the integrated power device.In the second part, this thesis discusses the performance of the power device based on floating region technology. At first, we make analysis on a low voltage power supply with floating p region technology, especially for explaining the reason of re-charging problem. Therefore, we proposed a structure of low voltage power supply, which is based on floating gate structure. The simulation result proves that this novel structure could operate as we predict.In the final part, the floating region technology is introduced to the power trench MOSFET, and we propose a self-biased split gate deep trench MOSFET. This novel device has a high switching speed as well as low specific on-resistance.