Study Of The SOI Lateral Power Device With Partial Super Junction

With the ever-increasing market for electronic products in the human society,the availability of electrical energy has become more and more significant.However,among the electric energy obtained by the current technologies,more than 75%of the electric energy needs to be converted by the power semiconductor device before being applied to the electric equipment.The power MOSFET?Metal Oxide Semiconductor Field-Effect Transistor?device has advantages of high input impedance,good frequency characteristics,and excellent switching characteristics,thereby making it have extremely wide application.However,as the demand for device application environments continues to increase,researchers have discovered that there is a contradiction between the breakdown voltage V_B and the specific on-resistance R_on,sp of conventional power MOSFET devices,which will produce a large conduction loss in the high-voltage applications.After the power device enters the aerospace field,one of the factors that it has to consider is the ability of the device to resist radiation.The SOI material has been greatly developed in the 20th century due to its anti-irradiation properties.SOI lateral devices made of SOI materials are also deeply loved by scholars.However,due to the low vertical breakdown voltage of SOI devices,it is difficult to obtain a device with a high V_B,and the application of a device with a higher breakdown voltage obtained by a special design has been limited due to its excessive specific on-resistance caused by the thin SOI layer.Based on the problems discussed above,this article has carried out relevant research work through the study and research of related theories and related experimental techniques in this field,and has made substantive progress and experimental results.Its main work,innovations,and related research achievements are as follows:Firstly,through the study and exploration of relevant theories and related experimental techniques,detailed theoretical design guidance applicable to the requirements of structural proposed in this paper was obtained,which can be used in other SOI lateral device structures,including the breakdown voltage design of super-junction thin layer SOI lateral devices and R_on,sp optimization.Secondly,a new structure named T-SJ SOI LDMOS device is proposed,which skillfully combines the two advantages of the SJ's low specific on-resistance R_on,sp and the thin layer SOI's high breakdown voltage V_B.Based on the guidance of relative theories,the proposed device was theoretically designed,and the device was further optimized by using TCAD tools such as Sentaurus,Medici,and Tsuprem4,which obtained a V_B of 988V and a R_on,sp of 185 m?·cm².Last but not least,for the key parameters of the T-SJ SOI device obtained by simulation optimization,the layout drawing of the proposed device was performed to tape out.In the experiment results,the actual silicon layer thickness of the thin silicon layer SOI region was 0.174?m.The experimental results obtained a super-junction SOI lateral high voltage device greater than 900V,and it has a lower specific on-resistance at the same time.Among them,the T-SJ SOI LDMOS device implement a R_on,sp of 145m?·cm² under a high V_B of 977 V,which is reduced by 18.1%lower than the conventional R_on,sp?V_B^2.5“silicon limit”.A good trade-off between V_B and R_on,sp is achieved.