Research On Digital Microwave Phase Shifter Chip And SoC Based On SiGe Process

In recent years,large-scale microwave millimeter-wave phased array has been developed rapidly in the field of military radar,and will be expected to become a modern communication program?such as 5G?components.They allow faster beam forming and stronger interference suppression,and thus result in better signal-to-noise ratio?SNR?and higher channel capacity.So there is an urgent need to develop high-performance,miniaturized,mass-produced phase shifter chip and RF T/R system-on-chip.Traditionally,III-V technologies?InP or GaAs?are utilized widely to fabricate the active phased array due to their better performance on output power and noise,but there are also some problems,such as high prices,low integration.However,the rapid development of BiCMOS process in the field of RF&Microwave,make the development of highly integrated low-cost phase shifter chip and RF front-end SoC possible.Based on GLOBALFOUNDRIES 0.13?m SiGe BiCMOS process,in this paper,the author getting start to research the microwave digital phase shifter chip and RF front-end SoC,include two 6-bit phase shifter chip?15¹8GHz,19²4GHz?,and a K-Band multi-function T/R SoC.Their results are as follows:The nfetw_rf with good high frequency performance and isolation characteristics in the process library is used as a key switching device in the phase shifter,both Ku-Band and K-Band passive phase shifters are cascaded with six phase shifting units.The Ku-band phase shifter works in the 15¹8GHz band,achieves 0³60° phase shift,the minimum resolution is 5.625 °,Phase shift RMS error<1.75 °,IL is-10.8dB^-9.3dB,Phase shift additional attenuation is between±0.1⁰.8dB,VSWR<2,input power P₁d B is 14.01 dBm.The K-band phase shifter works in the 19²4GHz band,6-bit phase shifting accuracy,Phase shift RMS error<2.60 °,IL is-13.8dB^-1.6dB,Phase shift additional attenuation is between±0.2¹.1dB,VSWR<2,input power P₁dB is 15.93 dBm.These two phase shifters have the characteristics of high precision,low insertion loss,wide bandwidth,high power linearity.According to the needs of laboratory projects,design a K-band full-chip TR transceiver components front-end chip additional.This SoC include wave control,power control,RF and other unit circuits;and the RF circuit integrate LNA,Amplifier,Switch,Digital Phase Shifter,Digital Attenuator and other units.Furthermore,in order to realize the noise and gain characteristics of the system in high and low temperature environment,Temperature compensation is introduced with a current source that varies linearly with temperature for amplifier,and embeds the temperature compensated attenuator module in the SoC individually.At room temperature,the simulation results in the 19GHz²4GHz Band show that: Receive /transmit channel gain>20dB,Receive channel noise figure<4.6dB,Receive channel input P₁dB>-14.3dBm,Transmit channel output P₁dB>12.4dBm,Phase shift accuracy is 6-bit,Phase Shift RMS error<2.9°,Attenuation accuracy 6-bit,Attenuation RMS error<0.52 dB.