A Study On The Modeling Of D-Gate SOI MOSFET Based On BSIM IMG

With the development of integrated circuits,CMOS technology is making process by leaps and bounds.Gate length is the key to progress in the semiconductor fabrication.Going through the period of 0.18?m,0.13?m to 90 nm,65 nm,45 nm,22 nm to 14 nm technology,Now FinFET device were used in iPhone 7 processor by manufacturer.In recent decades,Moore's Law almost has been followed to scale down the process.When the gate length gets smaller,semiconductor device become smaller.With higher integration of the same space,the more complex establishment of the device model will come out.Therefore,the establishment of the device model faces greater difficulties and challenges.Taking the new process and the impact of new materials on the device into account,the establishment of a precision device model has become the most popular force in semiconductor industry.In this environment,the model used to characterize the device appeared in large numbers.In this thesis,we study the BSIM IMG model which characterizes the double-gate device in the advanced technology node.In the case of a planar double-gate structure,the two gates will likely be asymmetric with different work functions and dielectric thicknesses,making the compact model more complex.The equations in the eigen and extrinsic models of the BSIM-IMG are derived from the physical surface potentials.The surface potential and the charge density at both ends of the source and drain can be obtained by solving the Poisson's equation by means of a fully depleted,lightly doped body and an approximate analytical solution.Based on the analysis of the characteristics of Double-Gate SOI MOSFETs and the BSIM IMG model equations,this thesis focuses on the development.The evaluation of BSIM IMG are based on models and the applicable range for FD devices.In this thesis,a set of 0.13?m process device is used to extract the parameters of baseband single-tube model,and then the global parameters are extracted according to global rule.After optimization,the threshold voltage,saturation current and linear current are evaluated.A global baseband model based on BSIM IMG is established.Then,the model of SOI MOSFET parasitics is analyzed under zero-bias condition.A small-signal model is built and the corresponding parameters are extracted.BSIM SOI,PSP SOI and BSIM IMG are selected.The BSIM SOI,PSP SOI and BSIM IMG are 0.13?m CMOS technology,the RF SOI MOSFET model of the same device is analyzed and evaluated,and the different semi-automatic parameter extraction process for the model library is developed.