Deep Sub-Micron MOSFET Nonlinear Capacitance Modeling Techniques Study

The continuing growth of RF(radio-frequency)wireless telecommunication market demands more and more crucial requirements for higher performance along with lower power consumption RF solution.MOSFETs are preferred in the application and design of high-frequency in view of SoC(System-on-Chip)because of their advanced performance.In the term of radio-frequency(RF)products,time to access market and reduction of design cycle depends heavily on the accuracy of design environment and circuit simulation results.As is known to all,it is radio-frequency(RF)device models that determines the accuracy of circuit simulation.Thus,crucial requirements for radio-frequency(RF)device models to predict circuit performance keep rising.This dissertation studied non-linear capacitance modeling technique for 90 nm MOSFET device.Some common used non-linear models for field-effect-transistor have been studied.Model parameter extraction procedure,validation and comparison of model accuracy are also researched.A new model is proposed by combining their advantages and taking charge conservation into consideration.The study of this paper mainly includes: 1)modeling procedure of non-linear MOSFETs and improved small-signal equivalent circuit components parameter extraction method;2)parameter extraction procedure for present field-effect-transistor non-linear capacitance models and accuracy for 90 nm MOSFET device have been studied;3)based on analysis of present models,a new non-linear capacitance model has been proposed,taking both sides of physical meaning(charge conservation and symmetry)and model accuracy into consideration.Simulation results under positive bias condition fit well with experimental results;4)On the basis of new model,relationship between intrinsic components parameter extraction results and frequency has been further discussed and frequency model is presented.Higher accuracy is achieved when performing S parameter simulation and experiment measurement data with frequency range of 1~40GHz.