Modeling And Simulation Of Nanometer Double Gate MOSFET

The integrated circuit keeps scaling since its invention. However, there are many problems to be solved, since the size of it has reached nanoscale. Double-Gate-Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) is a promising candidate for future device. It can effectively suppress short channel effect and has better electric properties.Analytical Models for several double-gate MOSFET with different structures have been proposed. The date obtained with model is compared with Medici simulations. The electric properties of the device have also been investigated.Firstly, the series method was used to solve Poisson Equation. A potential and subthreshold swing model is presented for symmetric and asymmetric double-gate MOSFET. The potential profile of devices with different size and gate bias is calculated with the model. The dependence of subthreshold properties of device on channel length, channel thickness, gate oxide thickness, gate bias as well as dopant concentration was investigated.Then an analytical model for dual-material double-gate MOSFET is proposed. The series method was also applied. Poisson Equation with different boundary condition was solved to obtain the expression of electric potential and subthreshold swing for dual-material double-gate MOSFET. The model was verified with Medici Simulation. The electric properties of the device is also investigated.Final, a new structure, Junctionless Double Gate MOSFET is explored. Several conditions divided upon the value of potential are considered. The potential expressions for each condition is obtain by solving Poisson Equation with regional method. A drain current model as well as a threshold voltage expression is also obtained based on the potential model.