Analysis Of Basic Unit Circuit Performance Degradation Under NBTI Mechanism And Its Improvement Methods Research

Since the birth of Moore’s Law, the semiconductor technology has been developing in accordance with the law for half a century. In 2013, the ITRS(International Technology Roadmap for Semiconductors) predicts that the semiconductor device’s feature size will reach to 7nm. With the scaling-down of device, when the electric field of the gate oxide is higher than 6MV/cm, P-MOSFET negative bias temperature instability(NBTI, Negative Bias Temperature Instability) becomes the dominant factor which limit nano devices and the life of ICs.This dissertation is based on reaction-diffusion model(RD model, Reaction Diffusion model) of NBTI, and the main works is as follows:1. The traditional analog circuit simulation design flow based on SPICE is improved to adapted to the nanometer process, so the ability of circuits’anti-NBTI degradation can be improved;2. The simple current mirror, cascade current mirror and wide-swing current mirror biasing circuit are simulated and analyzed based on RD model. The results shows that the NBTI degradation of Cascode circuit is the most serious;3. All types of single-stage amplifiers, differential amplifiers and operational amplifiers are simulated and analyzed. What’s more, the two-stage operational amplifier is improved based on analog circuit simulation design flow. And the degradation of the -3dB band width decreased from 27% to 1%, the NBTI degradation of the PSRR and SR decreased to less than 1% too, thereby the impact of NBTI degradation on the two-stage operational amplifier is reduced significantly.