The Reserch And Design Of HVI Structure

The reduction of breakdown voltage(BV) influenced by high voltage interconnection(HVI) is a key problem in power integrated circuit, which essentially is that the modulation of electric field distribution at the device surface caused by HVI. With the rapid rise of structures, functions and applying range of PIC comes a rapid rise of influence causing by HVIThe main research contents as follow:1. The four kinds of HVI technologies prevent BV degradation from the introduced adverse charge induced by interconnections in different ways. Thick insulting film technology increases the distance between the HVI and surface of silicon. Field reduction layer technology uses additional doping layers with optimized impurity concentration to enhance the depletion of the drift region under HVI. Field plate technology shields the influence of HVI with various field plate structures. Self-shielding technology makes HVI avoid crossing over high voltage junction terminal(HVJT), thus no additional shielding structure is needed. The divided reduced surface field(RESURF) technology solves the leakage current in the self-shielding structure.2. Design kinds of new HVI technology, including: Narrow wire width HVI technology, Part field plate shielding HVI technology, Multiple chips HVI technology.3. Design a divided RESURF LDMOS, using two-dimension device simulation to complete a requirement of 600 V interconnection with optimation of its structure and concentration. This structure can be used in the power integrated circuit of various applications.