Modeling And Simulation Of The Microwave Effect Of CMOS Devices And Circuits

The research on interference and damage effect and protection technology of electromagnetic pulse on computer and digital circuits has becom one of the focuses of nowadays researchs. High power microwave, which can produce very high directional microwave destruction, is an important form of strong electromagnetic pulse. The injection of microwave pulse on digital circuits can make the circuit interference, error, even reverse. Current researches mostly focus on the injection experiment of complex system and subsystem and the injection experiment of ciucuits, the report on the basic circuit elements is seldom. It is important to carry out the research on the interference effect of HPM and also the process and mechanism of HPM on basic circuit elements.This paper mainly contain the following two parts: circuit and device simulation of the interference effect of HPM; compare simulation result and analyze. First, this paper establishs the HSPICE model of a CMOS inverter and study the microwave interference effect, through the injection of electromagnetic pulse together with formal signal in power port. The central work of the simulation is on the responses of the CMOS inverter to the injected microwave pulse power, frequency, pulse width, pulse front / back edge, and the operating voltage. We obtain the threshold voltage/power according to the simulation result. This paper also analyze the interference effect towards jiont inverter under microwave.Through using the device simulation software ISE-TCAD, this paper establishs a typical two-dimensional simulation model of CMOS inverter. Through the variation of total current density and the output vlotage, we study the responses of the inverter to the injected high power microwave pulse. The simulation results compared to the circuit simulation show that the output voltage of inverter occurs the interference effect under high power microwave. The interference amplitude differs with the change of pulse voltage, frequency, input and Vcc. We obtain the following discipline: the greater the interference pulse amplitude is, the interference effect is more obvious; when reaching the threshold voltage, the circuit will upset; the smaller interference pulse frequency have more powerful interference; the higher circuit voltage make interference/flip less likely to occur, high electrical level state is more sensitive to interference effect; the effect of interference also relate to the interference pulse rising edge and pulse width.The rising pulse power can trigger the inverter latch-up. The current flowwing from the power port to the ground will disapper after the end of interference pulse and the inverter will return to the formal state after a small delay.In this paper, the study provides a certain theoretical basis and a good foundation to the further study of interference effect and protection of CMOS inverter under high power microwave.