Research On Failure Analysis Technology

With large scale integrated circuit’s continuing development, Semiconductor IC becomes more and more complex, Reliability were requested developed accordingly too. The IC FA (Failure Analysis), which related with Reliability closely, becomes more and more important. How to locate the failure defect and find the failure root cause becomes the key point in modern IC Reliability & FA field.Reliability test, FA, Failure mode, FA Flows are studied in this paper. After introduced the Non-destructive Analysis:X-ray/SAM and Electrical analysis, This paper mainly covers the following advanced EFA localization technology:(1) EMMI & InGaAs (2) OBIRCH (Optical Beam Induced Resistance Change) (3) PVC (Passive Voltage Contrast). After get the surface hotspots by EFA localization, we also need effective PFA(Physics Failure Analysis) confirmation. With PFA, we can observe the detail physics info and get the root cause of the failure. The PFA ways include Delayer/Cross section (FIB), observing with SEM/TEM tool.This paper also introduce some new methods on EFA:combined PEM/OBIRCH and FIB was developed to locate the sub-micro defects successfully. Without FIB assistance, PEM/OBIRCH would not be able to isolate such kind of defects; Backside special package technology makes backside EFA location analysis happened on mini QFN/BGA/Chip level CSP ICs.By the ESD Analysis and Thermal failure case study, failure root causes are found after the FA and reliability test confirmed. Close connection between Reliability test and Failure analysis are introduced.Finally this paper provides a summary for the semiconductor Reliability FA technology and presents the new challenges in 3D packaging EFA localization and failure mode discursion from application view.