Advanced Efa Electrical Failure Analysis Of The Positioning Technology And Its The Pfa Physical Verification Technology

With large scale integrated circuit's continuing development, the IC FA (Failure Analysis) becomes more and more important and it is becoming more and more difficult. How to locate the failure defect becomes the key point in modem IC FA field. The EFA (Electrical Failure Analysis) ways which are studied in this paper is very important to locate the failure defect for morden IC Failure Analysis. This paper mainly covers the following 3 advanced EFA localization technology:(I) PEM(Photo Emission Microscope);(2) OBIRCH(Optical Beam Induced Resistance Change)for IC metal system EFA;(3) PVC(Passive Voltage Contrast) for the channel & GOI EFA.Even we can get the surface hotspots by EFA localization, without effective PFA(Physics Failure Analysis) confirmation, it is difficult to get the root cause of the failure and to give the process improvement advise. In this paper another key point is to discuss different PFA ways for different EFA localization ways to get the defect physical information. The PFA ways include delayer by chemical & CMP, FIB, GOI defect checking, sub dislocation TEM sample preparation and observation etc. This paper shows a lot of typical FA case from EFA localization to PFA confirmations, providing good reference for the failure analysis engineers.This paper also introduces the new EFA ways, such as backside EMMI, EMMI & OBIRCH transfer advise, and the MCT & InGaAs tech for long wavelenth photon detection. These will give the reader a comprehensive understanding to present EFA localization technologyThis paper finally provides a summary for the wafer level FA procedures and presents the new challenges in EFA localization.