| With the rapid development of global wireless communications technology,3GLTE (Long Term Evolution) standard is the future of wireless communicationtechnology mainstream. The uplink modulation of TD-LTE uses a single carrierfrequency division multiple access (SC-DFMA). And it has a high PAPR, strictspectral mask and high output power requirements. Power amplifiers are designedbasing on different technologies and different types for the2570-2620MHz band andthis works is as follows:1. Under3.3V supply voltage, the power amplifier works in class AB singleended structure using IBM0.18μm SiGe BiCMOS process. It includes input, outputand inter-stage impedance matching network and adopts base ballast resistor forimproving the stability. Finally layout, post-simulation and testing work arecompleted. To further improve the linearity and thermal stability of the poweramplifier, the improved solution is presented. Measurement results demonstrated that1dB output compression point better than16.5dBm,18dBm of the maximum outputpower,16dB of power gain and PAE15%.2. Under3.3V supply voltage, the power amplifier works in class E using UMC0.18μm CMOS process. In the design of the power amplifier, the input stage works inClass-AB class and output stage works in Class-E class with Cascode and finiteDC-feed inductance structure. Finally layout and post-simulation are completed. Tofurther improve performance, Doherty structure is proposed. Post-simulation resultsdemonstrated that23dBm of the maximum output power,22.5dB of Power Gain andPAE39.5%. |
