Design And Realization Of Ku-band GaAs PHEMT Monolithic Power Amplifier

With a variety of high-tech weapons, especially as the representative of phasedarray radar microwave transmit/receive module (T/R) of a large number of widelyused, microwave monolithic integrated circuit (MMIC) in military defense hasgradually replaced the traditional mixed IC, as an important supporting force. In theresidential and commercial areas, the development of3G technology widely usedtechnology also4G wireless communication terminals and base stations, microwavecommunication systems transmit/receive components of a higher requirement.Monolithic microwave integrated circuit through a series of process for manufacturing asemiconductor used in the microwave (or even a millimeter wave) band functionalcircuit, so that the microwave communication system may cost, high-volume,small-scale production. Design and manufacture of microwave monolithic integratedcircuits become very competitive countries of advanced technology. PA as a variety ofcommunication systems, especially microwave transmit/receive module (T/R) corecomponents, the system becomes a bottleneck restricting the development of monolithicmicrowave amplifier research and design has important significance.Gallium arsenide (GaAs) microwave power transistor materials, with highefficiency, low noise power, strong anti-radiation, etc., can be operated in continuouswave and pulsed mode. Which GaAs pseudomorphic high electron mobility transistor(GaAs pHEMT) heterojunction structure using a multi-layer epitaxy, the formation ofhigh electron mobility devices with two-dimensional electron gas, more suitable forhigh-frequency high-power applications, is a GaAs field effect transistor mainstreamtechnology, already formed a certain series of goods, and in the future there will stillbe considerable demand for GaAs devices.This paper introduces the basic theory of microwave power amplifiers, thephysical characteristics of the MMIC material, physical structure and how it workspHEMT transistor, MMIC circuits and passive device models. On this basis, usingAgilent ADS microwave circuit simulation software, using the circuit topology threecascaded common-source amplifier, designed a Ku-band2W GaAs MMIC PA andChina Electronics Technology Group Corporation23Research Institute of the0.25umGaAs pHEMT process online streaming film. After the chip carrier assembly, has beentested in the14.5~17GHz band offers more than33dBm (2W) saturated output power, 19dB small signal gain, in-band gain flatness of less than1dB, power added efficiencygreater than24%, the input and output in waves were less than2.0. Chip size3.15×1.7mm2.