Font Size: a A A

Ka-band Single-chip Integrated Power Amplifier Circuit Design

Posted on:2008-01-28Degree:MasterType:Thesis
Country:ChinaCandidate:A B LiFull Text:PDF
GTID:2208360212975221Subject:Radio Physics
Abstract/Summary:PDF Full Text Request
The project is from National Science Key Lab Fund project. The objective of the project is to develop a Ka-Band MMIC Power Amplifier. The request is that: f0±1GHz, small signal gain 15dB, output power 32dBm.According the development of the MMIC, the project adopts the method of multi-stage and multi-way to design the power amplifier. The research of the Ka-Band MMIC power amplifier is presented in the paper, including the verified of the model,the analysis of the passive component,the selective of the topology,matching network,the type of the bias circuit, and then the circuit layout is decided by the rule of the layout adjustment and the electromagnetism simulation. Finally, the designed MMIC Power Amplifier circuits are implemented with the 0.25μm GaAs Foundry of domestic. Two different circuit structures are used in this paper, which are carried out three times for technics implements. We test the Ka-Band MMIC power amplifier with the fixture designed by ourself. The results are: the output power>30dBm, the maximal output power is 31.2dBm at f0, the input voltage standing wave ratio(VSWR) <2.5:1, the small signal gain >15dB in the frequency range of f0±1GHz. Although the testing results have some distance with the prospective aim, we also get the satisfied results.
Keywords/Search Tags:GaAs, Ka-Band, Monolithic Microwave Integrated Circuit(MMIC), Pseudomorphic High Electronic Mobility Transistors(PHEMT), Power Amplifier
PDF Full Text Request
Related items